In SiC (silicon carbide) power devices, SiC's breakdown field strength is about 10 times that of silicon and its thermal conductivity about 3 times that of silicon, allowing operation at higher voltage, higher temperature, and higher switching frequency, and it is a key enabler for new energy vehicle main drive inverters, OBC, DC-DC converters, and 800V high-voltage platforms; 1200V/35mΩ and 1200V/60mΩ refer to the device's voltage rating and on-resistance, and lower on-resistance means lower conduction loss.