[KongchangAI]
Unverified50% confidenceFactExact time

NAND闪存基于浮栅晶体管对电荷的捕获与释放，具有读快写慢特性，通常仅支持3,000至10,000次程序/擦除（P/E）循环

1
Sources
50%
Confidence
Long-term
Relevance
7/19/2026
First Seen

Sources

High-Bandwidth Flash (HBF): A New Path to Breaking the AI Storage Bottleneck

Related Claims

UnverifiedNAND裸片的读取时间（tR）约为25至75μs，远高于DRAM的约50ns66% similarUnverifiedModern 3D NAND has now reached more than 200 layers, a process that stacks memory cells vertically within a single chip.65% similar

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