Unverified50% confidenceFactExact time
WSE-3的片上SRAM容量达到44GB，SRAM访问延迟约1ns，比HBM约100ns低10-50倍
1
Sources
50%
Confidence
Long-term
Relevance
7/22/2026
First Seen
Sources
Related Claims
UnverifiedSRAM访问延迟约1ns，HBM约100ns，SRAM延迟比HBM低约10-50倍82% similarUnverified在45nm工艺下，一次32位浮点乘法运算消耗约3.7pJ能量，从片外DRAM读取32位数据消耗约640pJ，片上SRAM访问需要约5pJ74% similarUnverified昇腾AI处理器中全局内存（HBM或DDR）的访问延迟远高于本地SRAM，两者可能相差数十到上百倍71% similarUnverifiedWSE-3采用整片12英寸晶圆制造，集成约4万亿个晶体管、90万个AI优化核心和44GB片上SRAM内存69% similarUnverified相比传统GDDR6显存，HBM的内存带宽可高出3-5倍，同时功耗更低、封装面积更小69% similar
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