Concept
SiC MOSFET
The silicon carbide metal-oxide-semiconductor field-effect transistor, a wide-bandgap power semiconductor device featuring high breakdown field strength, high thermal conductivity and low switching losses, suitable for high-efficiency power conversion.
Timeline (last 90 days)
Sep 6
SiC MOSFETs can reduce switching losses by 50–80% compared to conventional silicon-based IGBTs.
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