Unverified50% confidenceReleaseExact time
Shenzhen Pinghu Laboratory released the world's first 8-inch GaN-on-SiC enhancement-mode high electron mobility transistor (HEMT) process platform.
1
Sources
50%
Confidence
Short-term (~14 days)
Relevance
10/15/2026
First Seen
Valid until: 10/29/2026
Sources
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