Unverified50% confidenceFactExact time
片上SRAM提供了远超HBM的访问速度和带宽，消除了芯片到外部内存之间的数据搬运瓶颈
1
Sources
50%
Confidence
Long-term
Relevance
8/22/2026
First Seen
Sources
Related Claims
UnverifiedThe access latency of global memory (HBM or DDR) in Ascend AI processors is far higher than that of local SRAM, with the two potentially differing by tens to hundreds of times.71% similarUnverifiedWSE-3的片上SRAM容量达到44GB，SRAM访问延迟约1ns，比HBM约100ns低10-50倍69% similarVerifiedHBM achieves high-density interlayer interconnection by vertically stacking multiple layers of DRAM chips using through-silicon via (TSV) technology, delivering memory bandwidth up to 3–5 times higher than conventional GDDR6 memory, while consuming less power and occupying a smaller package footprint.68% similarUnverifiedSRAM access latency is approximately 1 ns, HBM approximately 100 ns, making SRAM latency about 10–50 times lower than HBM.67% similar
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