Unverified50% confidenceEventExact time
Samsung Electronics plans to more than double the production volume of its next-generation high-bandwidth memory (HBM4 and HBM4E) DRAM.
1
Sources
50%
Confidence
Medium-term (~90 days)
Relevance
9/20/2026
First Seen
Valid until: 12/19/2026
Sources
Related Entities
Related Claims
UnverifiedThe per-unit price of HBM3e is more than 5 to 8 times that of conventional DRAM of the same capacity.67% similarUnverifiedThe latest generation of HBM3E can include 8 to 12 DRAM die per stack, providing over 1 TB/s of bandwidth, which is more than 20 times the bandwidth of conventional DDR5 memory (50–60 GB/s).66% similarUnverifiedThe core driver of this round of price increases is the explosive growth in HBM demand, as AI accelerator cards such as NVIDIA's H100/H200 make heavy use of HBM, prompting Samsung and SK Hynix to redirect a significant proportion of their DRAM capacity toward HBM production.62% similarUnverifiedAccording to industry estimates, the DRAM wafer area consumed in producing one HBM3e chip is equivalent to producing approximately 5–6 standard DDR5 memory modules62% similarUnverifiedSince the second half of 2024, DRAM prices have entered a new upward cycle, driven by reasons including a surge in demand for HBM from AI servers causing memory manufacturers to shift production capacity toward HBM, thereby squeezing supply of conventional DDR5.61% similar
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